Description
ECG339 NPN Silicon RF Transistor 48V@7A, 40W Max ~ 27-50MHz. RF-50S10 (NTE339)
ECG339 NPN Silicon RF Transistor 48V@7A, Po=40W Max ~ 27-50MHz. RF-50S10 Package (NTE339)
The ECG336 is designed for use in large signal amplifier stages in industrial communications equipment operating at frequencies to 80MHz.
Specified 12.5 Volt, 50MHz Characteristics:
- Collector−Base Voltage, Vcbo: 24V
- Collector-Emitter Voltage Vceo: 48V
- Emitter−Base Voltage, Vebo: 4V
- Collector Current Ic: 7 Amps
- Output Power, Po: 40 Watts
- Total Device Dissapation, Ptot: 100W
- Minimum Gain: 7.5dB
- Case: RF-50S10
- Collector Efficiency: 50%
- Replaces: NTE339