Description
ECG335 NPN Silicon RF Transistor 25V@20A, 80W Max ~ 30MHz. RF-50F (NTE335)
ECG335 NPN Silicon RF Transistor 25V@20A, 80W Max ~ 30MHz. RF-50F Package (NTE335)
The ECG335 is designed for power amplifier applications in industrial, commercial and
amateur radio equipment to 30MHz.
Specified 12.5 Volt, 30MHz Characteristics:
- Collector−Base Voltage, Vcbo: 45V
- Collector-Emitter Voltage Vceo: 25V Maximum
- Emitter−Base Voltage, Vebo: 4V
- Collector Current Ic: 25 Amps
- Output Power, Po: 80 Watts
- Input Power, Pi: 5 Watts
- Total Device Dissapation, Ptot: 250W
- Minimum Gain: 12dB
- Case: RF-50F
- Collector Efficiency: 50%
- Replaces NTE335