Description
ECG313 NPN Silicon RF Transistor 30V@20mA, 150mW Max ~ 400MHz RF-15 (NTE313)
ECG313 NPN Silicon RF Transistor 30V@20mA, 150mW Max ~ 400MHz RF-15 Package (NTE313)
The ECG313 is specifically designed for VHF mixer and VHF/RF amplifier applications up to 400MHz. This device features high power gain, low noise, and excellent forward AGC characteristics.
Electrical Characteristics:
- Collector−Base Voltage, Vcbo: 30V
- Collector-Emitter Voltage Vceo: 30V
- Emitter−Base Voltage, Vebo: 4V
- Collector Current Ic: 20mA
- Total Device Dissapation, Ptot: 150mW
- Minimum Gain: 20dB Minimum
- Current–Gain Bandwidth Product, Ft: 400MHz
- Case: RF-15
- Replaces NTE313